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  irg4bc40upbf 
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irg4bc40upbf www.irf.com 3   
   7  ( %4%   8  ( %4%  9            1 10 100 1000 4681012 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 10v 5s pulse width cc 1 10 100 1000 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 0 10 20 30 40 50 60 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: i clamp voltage: 80% of rated power dissipation = 28w .  :   7- 9
irg4bc40upbf 4 www.irf.com   !!"! #! $%    
   "!& ' % !   !!      ! 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a i = 40a i = 20a i = 10a t , junction temperature (c) j c c c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes:  1. duty factor d = t / t 2. peak t = p x z + t  1 2 j dm thjc c  0 10 20 30 40 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge a
irg4bc40upbf www.irf.com 5   ()'
* +   * ' * "!& '       "!& ' 0 1000 2000 3000 4000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 20 40 60 80 100 120 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v  i = 20a ce c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) r = 10 ? v = 15v v = 480v a i = 40a i = 20a i = 10a g ge cc c c c t , junction temperature (c) j 0.6 0.7 0.8 0.9 1.0 1.1 0 102030405060 g total switching losses (mj) r , gate resistance ( ? ) a v = 480v v = 15v t = 25c i = 20a cc ge j c   ()'
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irg4bc40upbf 6 www.irf.com  (,   ()'
   "!  0.0 1.0 2.0 3.0 4.0 0 1020304050 c total switching losses (mj) r = 10 ? t = 150c v = 480v v = 15v i , collector-to-emitter current (a) a g j cc ge 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j
irg4bc40upbf www.irf.com 7 d.u.t. 50v l v * c  * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v   : % ( . ' :     ; :   :' :   t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e )      <  . =(  50v driver* 1000v d.u.t. i c c v    l    <  . ' :   
    0 - vcc r l icm vcc = 480f pulsed collector current test circuit
irg4bc40upbf 8 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2010 


  

  
   
   

     
        
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